ECE 777/877 SEMICONDUCTOR PROCESSING FOR VLSI

SPRING ‘02 LECTURE MW 2:00-3:15 pm, ED 129, 3 CREDITS

 

            Instructor:         Dr. Sacharia Albin, Phone: 683-4967, email: salbin@odu.edu

Office Hours:    MW 10:00-12:30 am, KH 231M

Course Objective: This course is designed to provide a comprehensive study of  theoretical and practical aspects of VLSI fabrication science and

                             technology.

 

            Prerequisite:      ECE 573 or Instructor's approval

            Text:     VLSI Technology, Edited by S. M. Sze, McGraw Hill, 2nd Edition and Class Notes & Handouts.

           

SYLLABUS OUTLINE

                                                                                                                        # of Lectures

I.          Crystal Growth & Wafer Preparation    - Chapter 1                                          2

            A.        Czochralski crystal growth, evaluation of crystals, crystal defects.

            B.         Wafer shaping and processing

            C.        GaAs crystal growth techniques

 

II.         Epitaxy - Chapter 2                                                                                          3

            A.        Vapor Phase Epitaxy, VPE

            B.         Molecular Beam Epitaxy, MBE

            C.        Metal Organic Chemical Vapor Deposition, MOCVD

            D.        Epilayer Evaluation

 

III.       Dielectric and Polysilicon Film Deposition - Chapter 6                                       2         

            A.        Chemical Vapor deposition

            B.         Plasma Assisted or Enhanced Deposition

 

IV.       Metallization - Chapter 9                                                                                  2

A.        Thermal, E-beam and Inductive Evaporation

B.                 Sputtering

C.                 Multilayer metallization

D.                 Chemical Mechanical Polishing (CMP)

 

V.        Oxidation – Chapter 3                                                                                      2

            A.        Growth mechanism, kinetics & oxidation techniques

            B.         Oxide properties

            C.        Oxidation induced defects

D.                 Redistribution of dopants

E.                  Ultra thin gate oxide

 

VI.       Diffusion - Chapter 7                                                                                        2

            A.        Models of diffusion in solids & diffusion mechanisms

            B.         Diffusion in Si, SiO2 & poly Si, and its measurement

            C.        Diffusion enhancement and retardation                                      

 

VII.      Ion Implantation – Chapter 8                                                                            2

            A.        Range theory

            B.         Implantation equipment

            C.        Annealing and junction formation

VIII.     Lithography – Chapter 4                                                                                   3

            A.        Lithographic process

            B.         Optical, E-beam, X-ray and other lithography techniques

IX.       Dry Etching – Chapter 5                                                                                   4         

A.        Pattern transfer, etch rate, selectivity & feature size control

            B.         Methods of plasma production and etching techniques

            C.        Etching of insulators, semiconductors and metals

X.        VLSI Process Integration – Chapter 11                                                            4

            A.        Basics of IC processing, miniaturization, scaling laws

            B.         Bipolar, NMOS and CMOS technologies

            C.        Diagnostic techniques, assembly, packaging, yield and reliability

 

Related References:     

Books

1.      Physics &Technology of Semiconductor Devices, by A.S. Grove

2.      Physics of Semiconductor Devices, by S. M. Sze

3.      Gallium Arsenide Technology, Edited by D. K. Ferry

4.      Solid State Electronic Devices, by B. G. Streetman.     

Journals

1.      IEEE transactions on Electron devices,

2.      Journal of Applied Physics

3.      J. Vacuum Science & Technology

4.      Applied Physics Letters

5.      Physical Review B

6.      Journal of Electrochemical Society

7.      Journal of Electronic Materials,

8.      Solid State technology

9.      Semiconductor International

 

Evaluation:       

            Midterm Examination March 4, 2002                            30% credit

            Projects                                                                        20% credit

            Term Paper & Assignments                                          20% credit

            Final Examination on Friday May 3, 3:45-6:45 pm        30% credit

 

 

Honor Code:

The Honor System at Old Dominion University is based upon the integrity of the individual.  This system assumes that the student will accept his/her role in the University community with a feeling of self-respect and duty.  The honor pledge requires that each piece of work submitted by a student is to be his/her own work unless prepared under other conditions specified by the instructor.